What (who) is buffered write-through - definition

Buffered HF; Buffered Oxide Etch

buffered write-through

<memory management> A variation of write-through where the cache uses a "write buffer" to hold data being written back to main memory. This frees the cache to service read requests while the write is taking place. There is usually only one stage of buffering so subsequent writes must wait until the first is complete. Most accesses are reads so buffered write-through is only useful for very slow main memory. (1998-04-24)

write-down

REDUCTION IN RECOGNIZED VALUE OF AN ENTITY

Write down; Goodwill writedown; Written off; Write-down; Writeoff; Writedown; Writedowns; Totalled; Write off; Tax write-off; Tax writeoff

¦ noun Finance a reduction in the estimated or nominal value of an asset.

Totalled

REDUCTION IN RECOGNIZED VALUE OF AN ENTITY

Write down; Goodwill writedown; Written off; Write-down; Writeoff; Writedown; Writedowns; Totalled; Write off; Tax write-off; Tax writeoff

·add. ·- of Total.

Wikipedia

Buffered oxide etch

Buffered oxide etch (BOE), also known as buffered HF or BHF, is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO₂) or silicon nitride (Si₃N₄). It is a mixture of a buffering agent, such as ammonium fluoride (NH₄F), and hydrofluoric acid (HF). Concentrated HF (typically 49% HF in water) etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning. Buffered oxide etch is commonly used for more controllable etching.

Some oxides produce insoluble products in HF solutions. Thus, HCl is often added to BHF solutions in order to dissolve these insoluble products and produce a higher quality etch.

A common buffered oxide etch solution comprises a 6:1 volume ratio of 40% NH₄F in water to 49% HF in water. This solution will etch thermally grown oxide at approximately 2 nanometres per second at 25 degrees Celsius. Temperature can be increased to raise the etching rate. Continuous stirring of the solution during the etching process helps to have a more homogeneous solution, which may etch more uniformly by removing etched material from the surface.

https://en.wikipedia.org/wiki/Buffered oxide etch